Curriculum Vitae
Dr. R. M. Mehra
Professor
Department
of Electronic Science
University
of Delhi South Campus
New
Delhi – 110 021, India
July
2009
Biographical Details
1. Name in full: Mehra Ram
Mohan
2. Date of Birth: January
17, 1945
3. Nationality: Indian
4. Field of
Specialization: Semiconductor
Materials & Devices
5. Designation: Professor
6. Address:
(a) Official: Department of Electronic Science
University of Delhi South Campus
New Delhi - 110 021, India
(b) Residential: 190, Deshbandhu Apartments
Kalka Ji
New Delhi – 110 019
Tel: 91-11-24115849 (O)
Fax: 91-11-24110876
Mobile: 91-9971271374 E-Mail: rammehra2003@yahoo.com
7. Academic career:
|
Degree |
Institution |
Year |
|
B. Sc. (Hons.) Physics |
University of Delhi |
1965 |
|
M.
Sc. (Physics) Specialization (Electronics) |
University of Delhi |
1967 |
|
Ph. D (Physics) |
University of Delhi |
1973 |
|
German (Diploma) |
University of Delhi |
1968 |
|
French (Diploma) |
University of Delhi |
1985 |
8. Recognitions:-
(i) Member: Editorial
Board, Journal of Applied sciences
(ii) Chairman : Semiconductor Society (India) (1997 –
98)
(iii) Consultancy : Amity School of
Engineering & Technology,
(iv) Visiting Faculty: Yangon University, Myanmar, on Govt. of
(Ph. D Training Programme) assignment, December 25, 2005 to January 23,
2006
(v) Visiting
Faculty: Kabul University, Kabul,
Afghanistan under World
Bank sponsored DU-KU Project “Strengthening of higher education
programme” May 23-July 14, 2008
9. Technology innovation: MOUs
with industries
(i) ORION MATRIALS SOLUTIONS PVT. LTD. Fabrication
of prototype Dye-
sensitized Solar Cell (DSSCs) on OMS substrates
(ii) Lambda Microwave Pvt. Ltd. Fabrication of
Solid state DSSCs and their Industrial Application
(1) Invited Talks
The total number of invited talks delivered during
1991-2007 are thirty three (39)
In India (26)
(a) Harcourt
Butler Technological Institute,
(b)
(c)
(d) University of Rajasthan, Jaipur (03)
(e) Department of Physics, Kurukshetra.
(f) Guru
(g)
(h)
(i) Sant Longowal Institute of Engg. & Tech., Sangrur
(j) Indo-Japanese Workshop New Delhi
(k)
(l)
(m)
(n) DAV College, Amritsar (02)
(o) National Physical Laboratory, New Delhi
(p) Indian Institute of Technology, New Delhi
(q) Gurukul Kangri University, Hardwar
(r) Guru Jambheshwar University, Hisar
(s) New Delhi (02)
(t) Center for Crystal Growth, Chennai
Outside
(a) IMEC, Kapeldreef,
(b)
(c) Nagoya Institute of Technology
(NIT),
(d)
(e) Aichi University of Education,
Kariya,
(f)
(g)
(h) Nagoya Institute of Technology (NIT),
(Details in Annexure I)
(2)
Research Projects: - (since
1995)
(i) International Collaborative Projects (04)
Sponsoring Agencies
(a)
DST (
(b) NSF
(
(ii)
National Projects (09)
Sponsoring Agencies
(a) UGC (03)
(b) CSIR (01)
(c) DRDO (03)
(d) IUAC (01)
(e) MNRE (01)
(Details in Annexure II)
(3) Reviewer :
1. Thin Solid Films (Elsevier Science)
2.
Journal of
Applied Polymer Science (Wiley Inter
3. Applied Surface Science (Elsevier Science)
4.
Applied
Physics Letters (
5. Journal of Applied Physics (AIP, USA)
6. Journal of Vacuum Science and Technology A (AVS Science and
Technology Society, (USA)
7. Journal of Non-crystalline Solids (Elsevier Science)
8. Indian Journal of Engineering & Materials Science
9. Solar Energy Materials and Devices (SOLMAT) (Elsevier Science)
10. Composites Science and Technology (Elsevier Science)
11. Materials Chemistry and Physics (Elsevier Science)
12. Progress in Organic Coatings (Elsevier Science)
(4) Membership
of Professional/Academic Bodies, Societies, etc.
(a) Treasurer
: Semiconductor Society (
(b) Member : Board
of studies,
University
(c)
Member :
(d)
Member : Mombusho [
(e)
Member : Governing Body,
(f)
Secretary : Semiconductor Society (
(g)
Member : Department Research Committee,
(June 2004 – Till date)
(h) Member : Department of Physics, Guru Ghasidas University, Bilaspur
(March 2006 – Till date)
(5) Technical
Visits Abroad: Nineteen (20)
(a) Department
of Electrical and Electronic Engg.,
March 1974 - March 1975 (JSPS
Fellow)
(b) Philips,
May 1983 - June 1983 (Training on EPMA)
(c) International
Centre of Theoretical Physics [ICTP],
June 1985 - September 1985
(d) Department
of Electronic & Computer Engg.,
Dec.1990-Feb.1991
(e)
May19 - May 22, 1994
(f) Toyohashi
University of Technology & Nagoya Institute of Technology, Japan:
(g) Nagoya
Institute of
Oct.1 -10, 1999, March 1 -18, 2001,
February 7-
February 25 –
(h)
(i)
March 10 –
(j) Dept
of Physics,
May 1998 - June 1998,
(k) IMEC, Kapeldreef, Leuven,
(l) Kabul University, Kabul, Afghanistan
May 23-July 14, 2008
(6) International Conferences
Abroad: Five (05)
(a) “International Conference on Amorphous Semiconductors,”
(b) “ICAMS-18,”
(c) “PV
in
(d) “AIOM
2005”
(e) “23rd European PVSEC”, Valencia, Spain: September 1-5, 2008
(7) Organization of Conferences, Seminars and Workshop:
As Chairman (05) 2005, 2006, 2006, 2008, 2009
As Secretary (07) 1988, 1992, 1995, 1996, 1997, 2000, 2002
As Member (12) 1999 (03), 2000, 2000, 2001, 2002, 2005, 2006, 2006, 2007, 2007
(Details in Annexure III)
|
Research Interests / Specialization |
|
Highly
significant and seminal contribution in the area of semiconductor materials
and devices has been made. The highlights of certain front line areas are: Dye-Sensitized Solar
Cell (DSSC): Most recently, ZnO based DSSC has been developed in the laboratory of
Prof. Mehra having incident solar
light to electric energy conversion efficiency of 3.9%,1.
The development of ZnO based DSSC has drawn attention of the
industry and one MOU has already been signed. Another industry has also
approached to develop DSSCs for industrial applications. A blended dye having
broad absorption in the visible region and an efficiency of 7.8% has been
achieved.A patent for the dye has already been filed with IPR, India. Multifunctional ZnO: Ram Mohan’s most recent work has concentrated on band structure of ZnO and on space charge limited currents in polycrystalline thin ZnO films. It is well known that Moss-Burstein effect widens the optical band gap while many body interactions cause shrinkage of fundamental band gap. However, accurate prediction of the effective band gap has been made by him taking properly into account both the effects. To establish the relation and check for the validity of the proposed relation, experiments were conducted on different types of impurities with their concentration varying over a wide range. Excellent agreement between the experimental results and theory was found32 (Cited 8 times). This experiment has removed many anomalies that existed between theory and experiment in the literature. This result is likely to be quoted in textbooks and research treatises in the future. His work on co-doping of Ga and N to obtain p-type ZnO films34 for their application in UV laser has resulted in the breakthrough for further development of p-type ZnO films by several other research groups (Cited 75 times). High quality epitaxial ZnO: Al films on silicon and sapphire has been obtained12, 33 (Cited 24 times). Highly transparent and conducting n-type ZnO: Al films35 have been prepared by PLD. These films are suitable to use as low cost transparent electrodes. Sol-gel derived transparent and conducting Sc, Y and Al doped ZnO films have also been developed13,25,26. Porous Silicon: A unified model47
for the photoluminescence and transport data of porous silicon has been
successfully developed. Stable PL
emission in high energy ion beam irradiated porous silicon is obtained42
(Cited 7 times). ZnO/PS nanocomposites exhibiting
broadband luminescence across most of the visible spectrum (450–900 nm) have
been fabricated using a simple and low cost process39,40. These
nanocomposite films could be used as a solid source of white light emission
for various potential applications. Conducting Polymer Composites: The percolative nature of the insulator-conductor
transition of Polystyrene/Foliated Graphite nanocomposite due to the addition of foliated graphite has been
described by GEM equation. In-situ polymerization has resulted in the low
value of volume fraction of FG for achieving percolation threshold. The
electrical conductivity as high as 10-2 S/cm has been obtained
without significantly affecting the hardness. High value of dielectric
constant (~ 104) has been obtained at low frequency for highly
conducting Polystyrene/Foliated Graphite
composite. The analysis of the current-voltage characteristics of
Polystyrene/Foliated Graphite nanocomposite
has revealed that the tunneling transport mechanism of charge carriers near
the percolation threshold, transforms to ohmic conduction above percolation56.
Electrical conductivity and dielectric constant of styrene-acrylonitrile/graphite sheets composites as a function of volume fraction of graphite sheets have been critically examined. The study has confirmed percolation phenomenon in these composites. A high value of conductivity (1.7 x 10-3) and dielectric constant (2.96 x 104) has been obtained near percolation. The composites have been found to possess hardness close to the pure polymer. These polymer composites having high conductivity and large dielectric constant can be used for embedded capacitor application57. The variation of electrical conductivity and dielectric constant with graphite content of the High Density Polyethylene/graphite composites follows the normal percolation behavior. Near percolation threshold, a high value of conductivity and dielectric constant has been observed for the composite having ф = 0.027. These composites can be used in charge storing devices due to these properties. The observed high dissipation factor makes these composites also suitable for decoupling capacitor applications. The prime contribution to EMI shielding effectiveness in these composites is due to reflection. All the composites show good reproducibility in electrical resistivity up to 90 oC for number of heating and cooling cycles. The composites having ф = 0.027 also exhibits high PTC phenomenon. Thus this composite could be utilized in self-controlled heaters, current-limiters58, etc. The use of foliated graphite as filler has been found to lower the percolation threshold. The electrical conductivity as high as 10-1 S/cm has been obtained without affecting the hardness significantly. The electrical conductivity data could be well understood in terms of GEM equation. The dominant transport mechanism of charge carriers near and above percolation threshold are found to be tunneling and ohmic conduction respectively55. Amorphous Semiconductors: Carrier-type reversal i.e. p-n transition has been obtained in Pb doped Se-In
chalcogenide86 (Cited 26 times) which allows useful
fabrication of junction devices. Frequency dependence of conductivity127
of chalcogenide glasses
lead to the development / testing of theoretical models for ac transport in
chalcogenides (Cited 2 times). |
09. Publications
and/or Patents of the nominee
(a) Research papers published in full: 153
(Total Publication: Annexure IV a
along with Journal wise breakup)
(2005-2009
[50 Publications]: Annexure IV b)
(b) Short research papers: 00
(c) Scientific reviews: 02
“Magneto
resistance in Amorphous Semiconductors”
Thin Solid Films 100 (1983) 81-109.
“Physics
of device grade a-Si”
Solid State Phenomenon) 44-46 (1995) 41-94.
(d) Articles (not abstracts) published in seminars,
symposia, conference volumes:
Interference Conference 13
National Conference 9
(Details in Annexure V)
(e) Chapters contributed to books: 01
(f) Books-authored or edited: 02
Editor:
(1) Proceedings “Semiconductor Material and
Technology”
(SCIETEC Publications, Switzerland, 1997)
(2) Proceedings “ Zinc Oxide Materials and
Devices”
(Pentagon Press, New Delhi,
2006)
(g)
Ph.D
Supervision:
(37) (up
to July 2009) (Annexure VI)
(h) Patents: A dye with broadband absorption in the visible spectrum for
efficient
dye sensitized solar cell has been developed. A patent
for the
same has been filed. (Application No. 2288/DEL/2008)
(i) Cited Papers by other researchers: 45
(Summary of Citation: Annexure VII)
(Where cited: Annexure VIII)
Annexure
I
Invited Talks
In India (26) and Outside India (13)
Annexure
I
Invited Talks in
India (26)
1. Use
of chalcogenides for optical memories
2nd National Conference on Disordered Materials,
2. Interpretation of unexpected transitions in
DSC results and crystallisation kinetics of some Se-Te based glasses
3. Electrical
Transport in a-Si : H
All India Seminar on disordered Electronics,
4. Optical storage devices and p-n junction formation using chalcogenide alloys
National seminar on disordered materials,
October 24 -26, 1994,
5. Variation
of effective mass as a function of size of nanocrystal (PS)
National Conference on Recent Advances in Semiconductor,
June 20 -22, 1995, Indian
6 Electrical
transport in Porous Silicon.
Regional
Workshop on Low Dimensional Semiconductor Structures
7. Interaction
of Q-switched Nd : YAG laser with HT Superconductor
International Conference on Developments in Disordered Materials,
8. Development and Characterization of Porous Silicon (a Review)
3rd International Conference and Intensive Tutorial Course on Semiconductor Materials and Technology, ICSMT’96,
9. Sulfur Doped a-Si:H, A solution to Photodegradation
National seminar on Characterisation of semiconductor Materials for Device Application,
10. Porous
Silicon: (A State of
National Conference on Semiconductor Materials & Recent Technologies
Department of Physics,
11.
Transport Properties of Transparent Al Doped ZnO
Tenth International Workshop on Physics of Semiconductor Devices
12. Study
of ZnO: Al Thin Film Prepared By ArF Excimer Laser Ablation.
National Seminar on Material Science: Trends and Future
13. Concepts,
Fabrication and Packaging of Micro Electro Mechanical Systems
Indo-Japanese Workshop on Micro System Technology
November,
23-25, 2000, New Delhi
14. Fabrication
and Characterization of p-type Zinc Oxide Thin Films
International Conference on Advanced Materials (ICAM-2000)
(
15. Highly Conductive and Transparent n- and p-type
Zinc Oxide Thin Films in Oxygen Ambient
Eleventh International Workshop on Physics Semiconductor Devices,
(Dec. 11 -15, 2001),
16. Digital electronics and Boolean
algebra
International Conference on the Use of Technology in Teaching and learning of Mathematics and Biomathematics
17. Effect of g-Al2O3
buffer layer on aluminum doped Zinc Oxide (AZO) thin films on Si
II National Conference on Thermophysical Properties
(
18. Materials
for Electromagnetic Shielding
National
conference on Electromagnetic Interference and its control
(
19. Porous silicon-luminescence stability
DRS-UGC Seminar on Advances in Semiconductor Devices and other
Materials
(
20. Development
of highly transparent and conducting Yttrium
doped ZnO films
National conference on Advanced Materials & Technology
(
21. ZnO Based
Dye-sensitized Solar Cells: Optimization of Fabrication Parameters
2nd National
Conference on Condensed Matter and Material Physics (CMMP-07)
(Feb. 1-3, 2007), Department of Physics, University of Rajasthan, Jaipur.
22. Analysis of the
electrical and morphological properties of polystyrene/graphite nanocomposite
(In Hindi)
National conference on Metrology & Quality Management
(July 11-13, 2007), National Physical Laboratory, New Delhi.
23. Zinc Oxide based Dilute Magnetic Semiconductor
National Conference on Semiconductor Materials & Technology (NC-SMT-2008)
(Oct. 16-18, 2008), Dept. of Physics, Gurukul Kangri University, Hardwar
24. Fabrication, characterization and
analysis of n-ZnO/p-Si heterostructure for photodiode application
National Conference on Photonics & Materials Science
(October 24-25, 2008), Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar - 125001 (Haryana)
25 ZnO-porous silicon nanocomposite for white
light emitting source application
INDO-US workshop on Visible and Ultraviolet Sources
for Solid State Lighting and Water Purification
(January 5-7, 2009), Crystal Growth Centre, Anna
University, Chennai, India
26 Epitaxial growth of Sc-doped ZnO films on p- Si (100) and c-plane sapphire by sol-gel process
without a buffer layer
National Conference on
Recent Trends in Material Sciences
(February10 and 11, 2009), Department of Physics, DAV College, Amritsar
Invited Talk outside
India (13)
1. Investigation of the solar cell
parameters of n-C/p-Si heterojunction under various ambient conditions
(
2. Amorphous
Carbon Solar Cell
(
3. Epitaxial
growth of high quality Al-doped ZnO (ZnO: Al) film on Si and Sapphire
(
4. Transport properties of carbon thin films and its application to
photovoltaic devices
(
5. Highly conducting and transparent n-type and
p-type zinc oxide films
(
6. n
& p type ZnO and Amorphous Carbon Solar Cell (Review)
(
7. Advances in Photovoltaics: Carbon Solar Cell
(
8. Improved Luminescence in Porous
Silicon through Heavy Ion Irradiation
(
9. Highly conducting and transparent n-type and p-type zinc oxide films
(
10. Sol-gel
process Yttrium and Aluminum doped ZnO films
(
11. Plasma
Enhanced Chemical Vapor Deposition of ZnO thin films
(
12. Characterization of Sol-Gel derived
undoped and Al doped ZnO films (Epitaxial films)
(
13. Sol-gel Process Yttrium and Aluminum
Doped ZnO Films n-ZnO/p-Si Heterostructure
(
Annexure
II
Research Projects (since 1995)
Annexure
II
Research Projects: -
(since 1995)
(i) International Collaborative Projects (04)
1 Laser induced crystallization of a-Si:H
Sponsored by DST (India) and JSPS (Japan) (PI) (completed)
2 Photo-induced degradation in hydrogenated amorphous silicon
Sponsored by NSF (USA) (Co-PI) (completed)
3 Investigation of the electrical & optical properties of a–C films by PLD and Application to photovoltaic devices
Sponsored by DST (India) and JSPS (Japan) (PI) (completed)
4 Solid-state Dye- sensitized Solar Cells based on Nanostructured Zinc
Oxide Films
Sponsored by DST (India) and JSPS (Japan) (PI) (on going)
(ii) National Projects (08)
1. “High pressure induced phenomenon in amorphous semiconductors” Sponsored by University Grants Commission (UGC). Approximate cost: Rs. 6, 00, 000/- Duration: Four Years. (PI) (Completed)
2. “Development and Characterization of chalcogenide based alloy films for optical recording with minimum erase time” Sponsored by Council of Scientific and Industrial research (CSIR).
Approximate cost: Rs. 4, 00, 000/- Duration: Four Years. (PI) (Completed)
3. “Development and Characterization of Porous Silicon”
Sponsored by University Grants Commission (UGC).
Approximate cost: Rs. 5, 00, 000/- Duration: Three Years. (Co-PI) (Completed)
4. “Development and Characterization of Transparent Conducting Material for Optically Control Devices”
Sponsored by Defence Research &Development Organization (DRDO)
Approximate cost: Rs.20, 00, 000/- Duration: Three Years. (PI) (Completed)
5. “Modeling and Investigation of Hetrostructure Carbon Photo Volatic Devices”
Sponsored by University Grants Commission (UGC). Approximate cost: Rs.2, 00, 000/-
Duration: Three Years. (Co-PI) (Completed)
6. “Stabilization of structural, optical and photoluminescence properties of ZnO/porous silicon/silicon heterostructure using swift heavy ion (shi) irradiations”
Sponsored by Nuclear Science Centre (NSC)
(JRF + 15, 000 contingency/consumable per year for 3 years) Duration: Three Years. (PI) (completed) w.e.f March 2005
7. “Development of ZnO/Si heterostructures for photodiode applications using sol-gel technique”
Sponsored by DRDO
Approximate cost: Rs.14, 38, 000/- Duration: Three Years. (PI)
(completed) w.e.f.
8. “Development of Polymer/Graphite Conducting Nanocomposite for EMI
shielding”Sponsored by DRDO
Approximate cost: Rs.13, 11, 000/- Duration: Three Years. (PI)
(completed) w.e.f.
9. “Solid-states Dye-sensitized Solar Cells based on
Nanocrystalline Oxide
Semiconductor Films”
Sponsored by MNRE
Approximate cost: Rs.20, 65, 540/- Duration: Two Years. (PI) (on going
w.e.f.
November 2007)
Annexure
III
Organization
of Conferences, Seminars and Workshop
Annexure
III
Organization of
Conferences, Seminars and Workshop:
A.
As Chairman
1. Asia-Pacific Microwave Conference, New Delhi, December 15-18, 2004
(Exhibition Chair)
2. Workshop on Sol-Gel Derived Thin Films & Devices, New Delhi, June 17-18, 2005
3. India-Japan Workshop on ZnO Materials and Devices, New Delhi, December 18-20, 2006
4. National Conference on Semiconductor Materials & Technology, Hardwar, October 16-
18, 2008
5. 12th International Symposium on Microwave and Optical Technology, New Delhi, December 16-19, 2009
(Exhibition Chair)
B.
Secretary
1. International Conference and Intensive Tutorial Course on Semiconductor Materials,
2. International Conference and Intensive Tutorial Course on Semiconductor Materials,
3. International Conference and Intensive Tutorial Course on Semiconductor Materials,
4. Regional Workshop on Low Dimension Semiconductor Structures,
5. Regional Workshop on Low Dimension Semiconductor Structures,
6.
Indo-Japanese Workshop on Micro System Technology,
7.
Indo-Japan Academic & Educational Conference,
C. As Member
1. Member: Steering Committee, Tenth International Workshop on Physics of
Semiconductor Devices, (Dec. 14 -18,
1999) Delhi, India
2. Member: Programme Committee, Indo- Russian Workshop on Micro
Mechanical
Systems, (Feb. 2-4, 1999),
3. Member: Advisory Committee, National Conference on Semiconductor
Materials & Recent Technologies (SMART' 99),
(
4. Member: Advisory Committee, National Conference on Materials and
Semiconductor Technologies in Electronic Research (MASTER 2000),
(Nov. 8-10, 2000),
5. Member: Advisory Committee, International Conference on Advanced
Materials (ICAM-2000), (
6.
Member: Steering
Committee, Eleventh International Workshop on Physics of Semiconductor Devices,
(Dec. 11 -15, 2001)
7. Member: Advisory Committee, II National Conference on Thermophysical
Properties,
(
8.
Member: Steering
Committee, Eleventh International Workshop on Physics of Semiconductor Devices,
(Dec. 13 -17, 2005)
9. Member: Steering Committee, National Conference on Advances in Technology
Important Crystals, (Oct. 12-14, 2006), Delhi, India
10. Member: Advisory Committee, National conference on Metrology & Quality
Management, (July 11-13, 2007), New Delhi – 110 012
11. Member: National Organizing Committee, 4th
National Conference on
Thermophysical Properties, (Sept. 21-22, 2007), Kollam,
Kerala
12. Member: Steering Committee, National conference on Electron Microscopy &
Allied Fields, (Nov. 26-26, 2007), University of Delhi – 110 007
.
Annexure IV a
TOTAL LIST OF RESEARCH PUBLICATIONS (1971
to July 2009)
In Indexed/ Peer Reviewed Journals
LIST OF RESEARCH PUBLICATIONS (1971 to July
2009)
Published In Press
Accepted Total
151 02 00 153
(►
represents citation)
A. SOLAR CELL
|
1 |
Seema Rani and R. M.
Mehra (2009) ZnO solid-state dye sensitized solar cells using
composite electrolyte of poly (3-hexylthiophene-2,5-diyl)
and carbon nanotubes Journal of Renewable and Sustainable Energy, 1,
033109 |
|
2 |
Seema Rani, Poonam Suri, P. K. Shishodia and R. M. Mehra (2008) Synthesis of
nanocrystalline ZnO powder via sol-gel route for dye-sensitized solar cells Solar
Energy Materials and Solar Cells, 92,
1639-1645. |
|
3 |
Poonam
Suri and R. M. Mehra (2007) Effect
of electrolytes on the photovoltaic performance of a hybrid dye sensitized
ZnO solar cell ►Solar Energy Materials and
Solar Cells, 91, 518-524. |
|
4 |
Poonam Suri, Manoj Panwar
and R. M. Mehra (2007) Photovoltaic performance
of dye-sensitized ZnO solar cell based on Eosin-Y photosensitizer Materials Science-Poland, 25,137-144. |
|
5 |
B. Gupta, A. Kapoor, R. M. Mehra,
K. M. Krishna, T. Soga, T. Jimbo, and M. Umeno (2003) Light-induced changes in the solar cell parameters and temperature
coefficient of n-C/p-Si heterojunction
solar cell Solar Energy Materials & Solar Cells “SOLMAT”, 79,
305-311. |
|
6 |
B. Gupta, P. K. Shishodia, A. Kapoor, R. M. Mehra, K. M. Krishna, T. Soga, T. Jimbo, and M. Umeno (2002) Effect of illumination intensity and temperature on
the I-V characteristics of n-C/p-Si hetrojunction ►Solar
Energy Materials & Solar Cells “SOLMAT”, 73, 261-267. |
|
7 |
B.
Gupta, P. K. Shishodia, A. Kapoor, R.
M. Mehra, K. M. Krishna, T. Soga, T. Jimbo, and M. Umeno (2002) Theoretical studies on the
solar cell parameters of n-C/p-Si heterojunction Journal
of Non-Crystalline Solids, 297,
31-36. |
|
8 |
A. Kapoor, R. M. Mehra and P. C. Mathur (1993) Effect of p-n coupling on reverse recovery transient
of a homojunction solar cell Solid State Elect, 36,
93. |
|
9 |
Avinashi Kapoor, R. M. Mehra, V. K. Sharms, K. N.
Tripathi and P. C. Mathur (1992) Theory of constant current
phase of reverse recovery transient for measurement of minority carrier lifetime in a homojunction
p+n solar cell J. I. E. T. E., 38, 289. |
C.
MULTIFUNCTIONAL
MATERIAL (ZnO)
|
10 |
Sharma, R., Sehrawat, K., Mehra, R. M. (July 2009) Epitaxial growth of highly transparent and
conducting Sc-doped ZnO films on c-plane sapphire by sol-gel process without
buffer Current Applied Physics (in press) |
|
11 |
Ruchika
Sharma, Kiran Sehrawat, Akihiro Wakahara and R. M. Mehra (2009) Epitaxial growth of Sc-doped ZnO films on Si by sol–gel route Applied Surface Science, 255,
5781-5788. |
|
12 |
Manoj
Kumar, R.M. Mehra, Se-Young Choi (2009) Effect of oxygen ambient
on structural, optical and electrical properties of epitaxial Al-doped ZnO
thin films on r-plane sapphire by
pulsed laser deposition Current
Applied Physics, 9,737-741. |
|
13 |
Ruchika
Sharma, P. K. Shishodia, Akihiro Wakahara and R. M. Mehra (2009) Investigations
of highly conducting and transparent Sc doped ZnO films grown by sol-gel
process Material
Science-Poland, 27, 225-237. |
|
14 |
Mamta Sharma and R. M. Mehra (2008) Effect
of thickness on structural, electrical, optical and magnetic properties of Co
and Al doped ZnO films deposited by sol-gel route Applied
Surface Science, 255, 2527-2532. |
|
15 |
Mamta Sharma and R. M. Mehra (2008) Structural,
Optical, Electrical and Magnetic properties of sol-gel derived Zn1-x-yCoxAlyO
films Material
Science-Poland, 26, 659-673. |
|
16 |
Parmod
Sagar, Manoj Kumar and R. M. Mehra
(2008) The
Meyer-Neldel rule in sol-gel derived polycrystalline ZnO-Al thin films Solid
State Communications, 147,
465-469. |
|
17 |
Anubha Jain, Pankaj Kumar, S. C. Jain, Vikram
Kumar, R. Kaur and R. M. Mehra, (2007) Trap
filled limit voltage (VTFL) and V2 law in space charge
limited currents Journal
of Applied Physics, 102,
094505-1-5. |
|
18 |
P.
Sagar, P. K. Shishodia and R. M. Mehra
(2007) Photoluminescence
and absorption in sol-gel derived ZnO films Journal
of Luminescence, 126, 800-806. |
|
19 |
Parmod Sagar, P. K.
Shishodia and R. M. Mehra (2007) Influence of pH value on the
quality of sol–gel derived ZnO films Applied Surface Science, 253, 5419-5424. |
|
20 |
A. Jain, P. Sagar and R.
M. Mehra (2007) Changes of structural,
optical and electrical properties of sol-gel derived ZnO films with their
thickness Materials Science-Poland, 25, 233-242. |
|
21 |
Parmod Sagar, Manoj
Kumar and R. M. Mehra (2007) Epitaxial growth of zinc oxide thin films on
epi-GaN/sapphire (0001) by sol-gel technique Thin Solid Films, 515, 3330-3334. |
|
22 |
Anubha Jain, P. Sagar and R. M.
Mehra (2006) Band gap widening and
narrowing in moderately and heavily doped n-ZnO films ►Solid
State Electronics, 50, 1420-1424. |
|
23 |
P. K. Shishodia, H. J. Kim, A. Wakahara, A.
Yoshida, G. Shishodia and R. M. Mehra (2006) Plasma enhanced chemical vapor deposition of ZnO
thin films Journal of Non-Crystalline
Solids, 352, 2343-2346. |
|
24 |
Ravinder Kaur, A.V. Singh, Kiran Sehrawat,
N. C. Mehra and R. M. Mehra (2006)
Sol-gel derived yttrium doped ZnO nanostructures
Journal of Non-Crystalline
Solids, 352, 2565-2568. |
|
25 |
Ravinder Kaur, A.V. Singh
and R. M. Mehra (2006) Sol-gel derived highly
transparent and conducting yttrium doped ZnO films Journal of Non-Crystalline
Solids, 352, 2335-2338. |
|
26 |
Parmod Sagar, Manoj Kumar and R.
M. Mehra (2005) Electrical and Optical
Properties of Sol-Gel Derive ZnO: Al Thin Films Materials Science-Poland, 23, 685-696. |
|
27 |
Ravinder Kaur, A. V. Singh
and R. M. Mehra (2005) Physical properties of natively textured yttrium doped zinc oxide
films by sol- gel Journal of Material
Science: Materials in Electronics, 16,
649-655. |
|
28 |
Parmod Sagar, Manoj Kumar and R.
M. Mehra (2005) Influence of Hydrogen
Incorporation in sol-gel derived aluminum
doped ZnO thin films Thin
Solid Films, 489, 94-98. |
|
29 |
Manoj Kumar, Akihiro
Wakahara, M. Ishida, Akira Yoshida and R.
M. Mehra (2005) Pulsed
laser deposition of epitaxial Al doped ZnO film on sapphire with GaN buffer
layer Thin
Solid Films, 484, 174-183. |
|
30 |
Ravinder Kaur, A. V. Singh
and R. M. Mehra (2005) Structural, electrical and optical properties of sol-gel derived
yttrium doped ZnO films phys. stat. sol. (a), 202,
1053-1059. |
|
31 |
R. Kaur, A. V. Singh and R. M. Mehra (2004) Development of highly
transparent and conducting yttrium doped ZnO film: Role of sol-gel
stabilizers. Materials Science-Poland, 22, 201-209. |
|
32 |
A. V.
Singh, R. M. Mehra, A. Yoshida and
A. Wakahara (2004) Doping
Mechanism in aluminum doped zinc oxide films ►Journal of Applied Physics, 95, 3640-3646. |
|
33 |
Manoj
Kumar, R. M. Mehra, A. Wakahara,
M. Ishida and A. Yoshida (2003) Epitaxial
growth of high quality ZnO:Al film on Si with a thin gAl2O3
buffer layer ►Journal
of Applied Physics, 93, 3837-3843. |
|
34 |
A. V.
Singh, R. M. Mehra, N. Buthrath,
A. Wakahara, and A.Yoshida (2003) p-type conduction in codoped ZnO thin films ►Journal of Applied Physics, 93, 396-399. |
|
35 |
A. V.
Singh, R. M. Mehra, N. Buthrath,
A. Wakahara, and A.Yoshida (2001) Highly
conductive and transparent aluminum-doped zinc oxide thin films prepared by
pulsed laser deposition
in oxygen ambient ►Journal
of Applied Physics, 90, 5661-5665. |
|
36 |
A. V. Singh, Manoj Kumar, R. M. Mehra, Akira Wakahara, and Akira Yoshida (2001) Al-doped
zinc oxide (ZnO:Al) thin films by pulsed laser ablation ►J. Indian Inst. Science, 81, 527-533. |
|
37 |
A. V. Singh, Manoj Kumar and R. M. Mehra (2000) Study of ZnO:Al Thin Films
Prepared by ArF Excimer Laser Ablation Indian Journal of Engineering
& Materials Sciences, 7,
259-263. |
C. POROUS SILICON
|
38 |
R. G. Singh, Fouran Singh, I.
Sulania, D. Kanjilal, V. Agarwal, Kiran Sehrawat, R. M. Mehra (2009) Electronic
excitations induced modifications of structural and optical properties of
ZnO-porous silicon nanocomposites Nucl.
Instr. and Meth. B, 267, 2399-2402 |
|
39 |
R. G. Singh, Fouran Singh, D. Kanjilal, V. Agarwal, R. M. Mehra (2009) White light emission from chemically synthesized
ZnO–porous silicon nanocomposite J.
Phys. D: Appl. Phys., 42, 062002. |
|
40 |
R. G. Singh, Fouran Singh, V. Agarwal, R. M. Mehra (2007) Photoluminescence
studies of ZnO/porous silicon nanocomposites J.
Phys. D: Appl. Phys., 40, 3090-
3093. |
|
41 |
Kiran
Sehrawat and R. M. Mehra (2004) Modification in
photoluminescence spectra of porous silicon by changing the surrounding
dielectric environment In. J. Pure & Applied
Physics, 42, 419. |
|
42 |
Kiran Sehrawat, Fouran Singh, B. P. Singh and R. M. Mehra (2004) Ion beam
modification of porous silicon using high energy Au+7 ions and its
impact on photoluminescence spectra ►Journal of Luminescence, 106, 21-29. |
|
43 |
Kiran Sehrawat and R. M. Mehra (2003) Photoconductivity
spectra of porous silicon as a function of preparation parameters. In.
J. Pure & Applied Physics, 41, 495–497. |
|
44 |
V. Agarwal, K. Sehrawat, R. M. Mehra and P. C. Mathur (2000) Analysis of the Shape of PL Spectra and Its
Temperature Dependence in Self-Supporting Porous Silicon phys. stat. sol. (a), 182, 385-388. |
|
45 |
V.
Agarwal, R. M. Mehra and P. C.
Mathur (2000) Analysis
of the broadening of photoluminescence spectra in porous silicon as function
of growth parameters ►Thin
Solid Films, 358, 196-201. |
|
46 |
R. G.
Mathur, R. M. Mehra and P. C.
Mathur (1998) Thermoelectric
power in porous silicon ►Journal
of Applied Physics, 83, 5855-5857. |
|
47 |
R. M. Mehra, V. Agarwal, V. K. Jain and P.
C. Mathur (1998) Influence
of anodisation time, current density and electrolyte concentration on
photoconductivity of Porous
silicon ►Thin Solid Films, 315,
281-285. |
|
48 |
R. M. Mehra, V. Agarwal, Vijay A. Singh and
P. C. Mathur (1998) Unified
model for the Luminescence and Transport data in self-supporting Porous Silicon ►Journal of Applied Physics, 83, 2235-2240. |
|
49 |
R. M. Mehra, V. Agarwal and P .C. Mathur (1997) Development
and Characterization of Porous Silicon (review) ►Solid State Phenomenon (SCITEC
Publishers, Switzerland), 55, 71-76. |
|
50 |
R. G.
Mathur, Vivechana, R. M. Mehra, P.
C. Mathur and V. K. Jain (1998) Electron
Transport in Porous Silicon ►Thin Solid Films, 312,
254-258. |
|
51 |
R. G. Mathur, R. M. Mehra and P. C. Mathur (1997) Magneto Transport in
Porous Silicon Thin Solid Films, 310, 94-96. |
D.
Composite CONDUCTING PolymerS
|
52 |
Varij Panwar, Jong-Oh Park, Suk-Ho Park, Sanjeev Kumar and R.
M. Mehra (2009) Electrical, Dielectric, and Electromagnetic Shielding
Properties of Polypropylene-Graphite Composites Journal of Applied Polymer Science Journal (in Press) |
|
53 |
Panwar V., Kang, B., Park, J.-O., Park, S. and Mehra, R. M. (2009) Study
of dielectric properties of styrene-acrylonitrile graphite sheets composites
in low and high frequency region European
Polymer Journal
45, 1777-1784 |
|
54 |
N.
k. Srivastava
and R. M. Mehra (2009) Effect of γ-rays irradiation
on morphology and electrical
properties of poly (vinyl chloride)/graphite composites Polymer Engineering
Science, 49, 1136 - 1141 |
|
55 |
N.
k. Srivastava
and R. M. Mehra (2009) Study
of electrical properties of polystyrene/foliated graphite composite Material Science-Poland, 27, 109-122. |
|
56 |
N.
k. Srivastava
and R. M. Mehra (2008) Study of Structural,
Electrical, and Dielectric Properties of Polystyrene/Foliated Graphite
Nanocomposite Developed Via In Situ Polymerization Journal of Applied Polymer
Science, 109, 3991-3999. |
|
57 |
Varij Panwar and R.M. Mehra (2008) Study of electrical and
dielectric properties of styrene-acrylonitrile/graphite sheets composites European Polymer Journal, 44, 2367-2375. |
|
58 |
Varij Panwar and R.M. Mehra (2008) Analysis of Electrical,
Dielectric, and Electromagnetic Interference Shielding Behavior of Graphite
Filled High Density Polyethylene Composites Polymer Engineering
Science, 48, 2178-2187. |
|
59 |
Varij Panwar, V. K.
Sachdev, R. M. Mehra (2007) Insulator conductor transition in
low-density polyethylene–graphite composites European Polymer Journal, 43, 573–585. |
|
60 |
H. S. Dahiya, Nawal Kishore and R. M. Mehra (2007) Effect of percolation on electrical and dielectric
properties of Acrylonitrile Butadiene Styrene/graphite composite Journal of Applied Polymer
Science, 106, 2101-2110. |
|
61 |
N.
k. Srivastava, V. K. Sachdev and
R. M. Mehra (2007) Investigation
of electrical and dielectric properties of pre-localized graphite/poly vinyl
chloride composites near the percolation threshold Journal of Applied Polymer
Science, 104, 2027-2033. |
|
62 |
V. K. Sachdev, N. K. Srivastava, Varij
Panwar, H. Singh, N. C. Mehra and R.
M. Mehra (2006) Electrical conductivity of prelocalized
graphite-filled blend of polyvinyl chloride/styrene acrylonitrile composites in relationship
to morphology and hardness phys. stat. sol. (a), 203, 3754–3761. |
|
63 |
V. K. Sachdev, Varij
Panwar, H. Singh, N. C. Mehra and R.
M. Mehra (2006) Study
of pre-localized Graphite/Styrene Acrylonitrile Conducting Composites for
Device Applications phys. stat. sol. (a), 203,
386-396. |
|
64 |
V. K.
Sachdev, N. K. Srivastava, Kamlesh Kumar and R. M. Mehra (2005) Pre-localized
Graphite/Polyvinyl Chloride Composites for Electromagnetic Interference
Shielding in X-band Frequency Range Material Science-Poland, 23, 269-277. |
|
65 |
V. K. Sachdev, N. C. Mehra and R.
M. Mehra (2004) Study of pre-localized
graphite/polyvinyl chloride electroconductive composites for sensors |
|
66 |
V. K. Sachdev, R. Kumar, A. Singh, S. Kumar and R. M. Mehra (1997) Electrically
Conducting Polymers: An Overview ►Solid State Phenomenon, 55, 104-109. |
E. AMORPHOUS SEMICONDUCTORS
|
67 |
Dinesh C. Sati, R. Kumar, R. M. Mehra, H. Jain, Ashtosh Ganjoo (2009) Kinetics
of photodarkening in a-As2Se3 thin films Journal of Applied
Physics, 105, 123105 |
|
||
|
68 |
Kamal
Kumar, L. P. Purohit, R. Kumar and R.
M. Mehra (2009) Investigation
of optical properties of GexSe80-xPb20 films J. Phys. D: Appl. Phys.,42, 115108 |
|
||
|
69 |
S. K. Sharma, P. Sagar, Himanshu Gupta,
Rajendra Kumar and R.M. Mehra (2007) Meyer–Neldel rule in Se and S-doped
hydrogenated amorphous silicon Solid State Electronics, 51, 1124-1128. |
|
||
|
70 |
Priyamvada Bhardwaj, P.K.
Shishodia and R. M. Mehra (2007) Photoinduced degradation
in electrical properties of normally and obliquely deposited As2Se3
thin films Materials
Science-Poland, 25, 69-77. |
|
||
|
71 |
Priyamvada
Bhardwaj, P. K. Shishodia and R. M.
Mehra (2007) Optical
and electrical properties of obliquely deposited a-GeSe2 films Journal
of Material Science, 42, 1196-1201. |
|
||
|
72 |
Dinesh Chandra Sati,
Rajendra Kumar and R. M. Mehra (2006) Influence of Thickness on
Optical Properties of a: As2Se3 Thin Films Turk. J. Phys., 30, 519-527. |
|
||
|
73 |
S.
K. Sharma, H. Gupta, Rajendra Kumar and R.
M. Mehra (2005) photoconductivity of selenium and sulphur doped a-Si:H thin films Turk.
J. Phys., 29, 243-248. |
|
||
|
74 |
Rakesh
Kumar, Naresh Padha, P. K. Shishodia
and R. M. Mehra (2003) Study
of dark and photoconductivity of Sb-doped CuInSe2 thin films In.
J. Pure & Applied Physics, 41, 723-726. |
|
||
|
75 |
S. K. Sharma, J. Baveja and R.
M. Mehra (2003) Dependence of electrical
conductivity on selenium and sulphur doping in a-Si:H In. J. Pure & Applied
Physics, 41, 491-494. |
|
||
|
76 |
Sanjeev Kumar Sharma, Jasmina Baveja and R. M. Mehra (2003) Study
of thermal equilibration of Selenium- and Sulfur-doped a-Si:H Int. J. Electronics, 90, 423. |
||
|
77 |
Priyamvada
Bhardwaj, P. K. Shishodia and R. M.
Mehra (2003) Photoinduced changes in
optical properties of As2S3 and As2Se3
films deposited at normal and oblique incidence Journal
of Materials Science, 38, 937 |
||
|
78 |
S. K. Sharma, J. Baveja and R.
M. Mehra (2002) The Dependence of Optical
Constants on Selenium and Sulphur-Doping in a-Si:H phys. stat. sol. (a), 194, 216. |
||
|
79 |
Priyamvada Bhardwaj, P. K.
Shishodia, R. M. Mehra (2001) Effect of oblique
deposition on optical and electrical properties of As2S3
and As2Se3 Journal of optoelectronics
and advanced materials, 3, 319-
322. |
||
|
80 |
R. M. Mehra, J. Baveja, L. P. Purohit, R. Kumar, A.V. Singh, P. C. Mathur and P.
C. Taylor (2000) Optical properties of
large bandgap Se - and S-doped a-Si:H Journal of Non-Crystalline
Solids, 266-269, 708-712. |
||
|
81 |
R. M. Mehra, Jasmina, P.C. Mathur and P.
C. Taylor (1999) Study of photoconductivity
and persistent photoconductivity in sulfur doped amorphous hydrogenated silicon INT. J. ELECTRONICS, 86, 1321-1332. |
||
|
82 |
Sandeep
Kohli, V. K. Sachdev, R. M. Mehra
and P. C. Mathur (1998) High
pressure studies on n-type Se-In-Pb chalcogenide glasses ►phys. stat. sol. (b),
209, 389-394. |
||
|
83 |
R. M. Mehra, Inderbir, P. C. Mathur and P. C. Taylor (1998) Study of photoconductivity
in TBP doped n -type hydrogenated amorphous silicon using argon as carrier gas Journal of Non-Crystalline
Solids, 227-230, 243-247. |
||
|
84 |
R. M. Mehra, Jasmina, P. C. Mathur and P. C.
Taylor (1998) Effect of
Sulfur doping on electrical conductivity of a-Si:H ►Thin Solid Films, 312,
170-175. |
||
|
85 |
R. M. Mehra, I. Kaur and P. C. Mathur
(1997) Effect of heavy doping on
dark conductivity of TBP doped n-type a-Si:H films Solid State Phenomenon, 55, 180. |
||
|
86 |
R. M. Mehra, Sandeep Kohli, Amit Pundir, V. K. Sachdev and P. C.
Mathur (1997) n-type
conduction in Pb doped Se-In Glass ►Journal of Applied Physics,
81, 7842-7844. |
||
|
87 |
R. M. Mehra, P. C. Mathur and P. C. Taylor
(1996) Physics of device grade
amorphous silicon Materials Science Forum, 223-224, 221-228. |
||
|
88 |
R. M. Mehra, Inderbir, Jasmina and P. C.
Mathur (1997) Tailoring
of Refractive Index of a-Si:H by TBP (C4H11P) Doping ►Journal of Non-Crystalline
Solids, 209, 188-192. |
||
|
89 |
V. K. Sachdev, S. Kohli, R. M. Mehra and P. C. Mathur
(1996) High
Pressure Studies on Se-Te Based Ternary Chalcogenide Glasses Materials
Science Forum (1996 Transtec Publications, Switzerland), 223-224, 245-252. |
||
|
90 |
R. M. Mehra, Amit Pundir, A. Kapoor and P. C. Mathur (1996) Suitability of Ge-As-Te
System for Optical Data Storage J.
Optics (France), 27, 139-143. |
||
|
91 |
V. K. Sachdev, Sandeep Kohli, P. C. Mathur and R. M. Mehra (1996) Effects
of Sb on Pressure Induced Transformation in Se-Te Glass ►phys. stat. sol. (a), 155, 461-466. |
||
|
92 |
R. M. Mehra, P. C. Mathur and P. C. Taylor
(1995) Physics of device grade
a-Si Solid State Phenomenon
(SCITECH Publishers, Switzerland), 44-46, 41 (Review Article). |
||
|
93 |
R. M. Mehra, Ashtosh Ganjoo, Gurinder and P.C.
Mathur (1995) Effect of
In impurity on the crystallization kinetics of (Se.7Te.3)100-xInx Journal
of Thermal Analysis, 45, 405-415. |
||
|
94 |
R. M. Mehra, Ashtosh Ganjoo and P.C. Mathur (1994) Electrical
and Optical Properties of amorphous (Se.7Te.3)100-xInx system ►Journal of Applied Physics, 75, 7334-7339. |
||
|
95 |
R. M. Mehra, G.
Kaur, Amit Pundir and P. C. Mathur (1993) Study of Se-Te-Sb system for
application to reversible optical data storage ►Jpn. J. Appl. Phys.,
32, 128-129. |
||
|
96 |
K.
Gaughan, Zhaohui Lin, J. M. Viner, P. C. Taylor, P. C. Mathur and R. M. Mehra (1993) Electronic and optical properties of n-type a-Si:H Journal of Non-Crystalline
Solids, 164-166, 343-346. |
||
|
97 |
R. M. Mehra,
Gurinder, Inderbir, Jasmina, Amit Pundir and P. C. Mathur (1993) Dark and Photoconductivity of TBP
doped n-Type a-Si:H Journal
of Non-Crystalline Solids, 164-166, 517-520. |
||
|
98 |
R. M.
Mehra, G. Kaur and P. C. Mathur (1993) Effect of antimony impurity on photoconduction in thin
films of Se-Te system ►Solid
State Communications, 85, 29-31. |
||
|
99 |
R. M. Mehra, Gurinder, Ashtosh Ganjoo,
Ravindra Singh and P. C. Mathur (1991) Effect of
antimony doping on the transport properties of glassy Se80-xTe20Sbx system ►phys. stat. sol. (a), 124, K 51-53. |
||
|
100 |
Rajesh
Kumar, A. Yoshida and R. M. Mehra
(1991) Physical
properties of amorphous Ge20Sb25-xBixSe35 thin films ►Journal of Non-Crystalline
Solids, 130, 248-255. |
||
|
101 |
R. M. Mehra, G. Kaur and P. C. Mathur (1991) Antimony
doping effect on the a.c. conductivity of the Se-Te system ►Physical Review B, 43, 12388-12392. |
||
|
102 |
R. M. Mehra, G. Kaur and P. C. Mathur (1991) Crystallization
kinetics of bulk amorphous Se80-xSbxTe20 ►Journal of Material Science, 26,
3433-3437. |
||
|
103 |
Rajesh Kumar, A. Yoshida, R. M. Mehra and K. Shimakawa (1991) Multiphonon hopping of
carriers on defect clusters in amorphous Ge20SbxSe80-x glasses Physical
Review B, 43, 4174-4178. |
||
|
104 |
R. M.
Mehra, Rajesh Kumar and P. C. Mathur (1989) Analysis of single polaron hopping
in the a.c. conductivity of Ge20SbxSe80-x glasses ►Journal of Applied Physics, 66
(10), 4785-4790. |
||
|
105 |
R. M.
Mehra, Rajesh Kumar and P.C. Mathur (1989) Electrical and optical properties
of Ge20SbxSe80-x thin films ►Thin Solid Films, 170, 15-26. |
||
|
106 |
R. M.
Mehra, Rajesh Kumar, P. C. Mathur and K. Shimakawa (1988) AC conduction in amorphous Ge-Se-Sb
system ►PHILOSOPHICAL MAGAZINE B 58,
293-302. |
||
|
107 |
R. M. Mehra, M. Arora, P. C. Mathur and H. Kumar (1987) DC conductivity and
thermoelectric power studies in bulk amorphous Ge/Subx/Se/sub1-x/
alloys Key-Engineering Materials,
13-15, 544. |
||
|
108 |
R. M. Mehra, H. Kumar and P. C. Mathur (1987) Temperature dependence on
DC and AC conductivity in amorphous Ge-Sb-Se films Key-Engineering Materials,
13-15, 554. |
||
|
109 |
R. M. Mehra, Manoj Arora, P. C. Mathur and
Hemant Kumar (1987) Electrical
transport properties of as evaporated and annealed amorphous GexSe1-x thin films ►Materials Chemistry and Physics, 17,
343-356. |
||
|
110 |
R. M.
Mehra, Hemant Kumar, S. C. Aggarwal, Pawan Sikka and P. C.
Mathur (1985) Low temperature hopping conduction
in amorphous GexSe1-x ►Journal of Non-Crystalline
Solids, 77 & 78, 1241-1244. |
||
|
111 |
R. M.
Mehra, S. C. Aggarwal, Saurabh Rani, Hemant Kumar and P. C.
Mathur (1985) Magnetoresistance measurements in
amorphous TexSe1-x films ►Journal of Non-Crystalline
Solids, 69, 261-269. |
||
|
112 |
R. M.
Mehra, Hemant Kumar, S. C. Aggarwal, Surinder Koul and P. C.
Mathur (1985) Magnetoresistance measurement in
bulk amorphous GexSe1-x system ►Journal of Material Science, 20,
2459-2463. |
||
|
113 |
R. M. Mehra, Hemant Kumar, Surinder
Koul and P. C. Mathur (1985) Low field dc conductivity of bulk amorphous GexTe10Se90-x system Materials Chemistry and
Physics, 12, 129-144. |
||
|
114 |
R. M. Mehra, Hemant Kumar, Surinder Koul and Pawan Sikka (1984) Electrical
transport properties of bulk amorphous GexSe1-x ►Materials Chemistry and Physics, 11,
481-494. |
||
|
115 |
R. M.
Mehra, Hemant Kumar, Surinder Koul and P.C.Mathur (1984) Thickness dependence of d.c
conductivity of amorphous Se and binary amorphous Se-Te, Se-Ge and Se-Sb
films ►phys. stat.
sol. (a), 83,
341-347. |
||
|
116 |
R. K. Sharma, S. K.
Bansal, R. Nath, R. M. Mehra, Kanwar Bahadur, R.P.Mall, K.L. Choudhary and C.L.
Garg (1984) Electron beam induced
explosive crystallization of unsupported amorphous germanium thin films ►Journal of Applied Physics, 55,
387-394. |
||
|
117 |
R. M.
Mehra, Radhey Shyam and P.C. Mathur (1983) Magnetoresistance in Amorphous
Semiconductors ►Thin Solid Films, 100,
81-109 (Review Paper). |
||
|
118 |
R. M. Mehra, S.C. Aggarwal, Saurabh Rani, Radhey Shyam and P.C. Mathur (1981) Conduction mechanism in
amorphous Si films Journal of Non-Crystalline
Solids, 43, 345-391. |
||
|
119 |
R. M. Mehra, S. C. Aggarwal, Saurabh Rani, Radhey Shyam and P.C. Mathur (1981) Magnetoresistance
measurements in as-evaporated and annealed a-Si films Thin Solid Films, 76,
379-380. |
||
|
120 |
R. M. Mehra, S.C. Aggarwal, Saurabh Rani,
Radhey Shyam, S.K. Aggarwal and P.C. Mathur (1980) Electrical
transport in amorphous Tex Se1-x films Thin
Solid Films, 71, 71-77. |
||
|
121 |
R. M. Mehra, Radhey Shyam, S. C.
Aggarwal and P.C. Mathur (1980) Electrical conduction mechanism in a polycrystalline
Sb35Se65 sample PHYSICS LETTER 75
A, 409-412. |
||
|
122 |
R. M. Mehra, Radhey Shyam and P.C.
Mathur (1979) Negative magnetoresistance of an amorphous Se-Te-Ge
sample phys. stat. sol. (a), 51, K 165-169. |
||
|
123 |
R. M. Mehra, Radhey Shyam and P. C. Mathur (1979) Electrical transport in bulk a-Se,
SeTe, SeSb and SeTeGe. ►PHYSICAL REVIEW B, 19,
6525-6531. |
||
|
124 |
R. M.
Mehra, Radhey Shyam and P.C. Mathur (1979) Off state thermal switching in
a-Se-Te-Ge system ►Journal of Non-Crystalline
Solids, 31, 435-439. |
||
|
125 |
R. M. Mehra, A.K. Kathuria, Radhey Shyam, A. L. Dawar and P.C. Mathur (1978) Determination of density
localized states in a-Se films phys. stat. sol. (a), 45, K 59-62. |
||
|
126 |
R. M. Mehra, A. K. Kathuria, Radhey Shyam and P. C. Mathur (1978) Negative magnetoresistance
of amorphous Selenium and Tellurium doped Selenium PHYSICS LETTER, 66,
74-76. |
||
|
127 |
R. M. Mehra, P. C. Mathur, A. K. Kathuria
and Radhey Shyam (1978) Frequency dependence of
conductivity of bulk amorphous selenium and tellurium-doped selenium ►PHYSICAL REVIEW B, 18, 5620-5624. |
||
|
128 |
R. M. Mehra, P.C. Mathur, A. K. Kathuria and
Radhey Shyam (1977) Dependence
of conductivity and activation energy on concentration of Te in amorphous
selenium phys.
stat. sol. (a), 41, K189-192. |
||
|
129 |
R. M. Mehra, P. C. Mathur, A. K. Kathuria and
Radhey Shyam (1978) Electrical
transport in bulk amorphous selenium ►J. Phys. Chem. Solids, 39,
295-298. |
||
|
130 |
Akira Yoshida, R.M. Mehra, I. T. O.Yoji and Tetsuya Arizumi (1975) Magnetoresistance in amorphous
germanium Phys. & Chem. Res.
Inst. (Japan), 3, 55. |
||
F. Semiconductors
Devices
|
131 |
Neeru Kumar,
Ravinder Kaur, R.M. Mehra (2007) Photoluminescence studies in sol–gel
derived ZnO films Journal of Luminescence, 126, 784-788. |
|
132 |
Neeru Kumar, R. Kaur, R. M. Mehra
(2006) Characterization of
sol-gel derived Yttrium Doped n-ZnO/p-Si Heterostructure Materials Science-Poland, 24, 375-383. |
|
133 |
V. Gopal,
S. K. Singh and R. M. Mehra (2002) Analysis
of dark current contributions in mercury cadmium telluride junction diodes ►Infrared Physics &
Technology, 43, 317-326. |
|
134 |
V. Gopal,
S. K. Singh, and R. M. Mehra (2001) Relationship
between deep levels and R0A project in HgCdTe diodes ►Opto-Electronics
Review, 9, 385-390. |
|
135 |
V. Gopal,
S. K. Singh, and R. M. Mehra (2001) Excess
dark currents in HgCdTe p+-n junction diodes ►Semicond.
Sci. Technol. UK, 16,
372-376. |
|
136 |
C. A. N. Fernado, L. A. A. A. De Silva, R. M. Mehra and K. Takahashi (2001) Junction
effects of p-Cu2O photodiode with layers of hole transfer sites
(Au) and electron transfer sites
(NiO) at the electrolyte interface ►Semicond.
Sci. Technol. UK, 16, 433-439. |
F. HIGH Tc SUPERCONDUCTORS
|
137 |
A. Mishra, S. K. Bansal
and R. M. Mehra (1998) Interaction of
superconducting Y1Ba2Cu3O7-x targets with 1.064
(m) Q-switched Nd:YAG laser Journal of Laser
Application, 10, 11-17. |
|
138 |
R. M. Mehra, A. Mishra and S. K. Bansal (1996) Interaction of Q-switched
Nd:YAG Laser with high temperature superconductive surfaces Materials Science Forum, 223-224, 341-352. |
|
139 |
Anurag Mishra, N. D.
Kataria, C. L. Garg, S. K. Bansal and R.
M. Mehra (1995) Nd:YAG laser irradiation
of molecular beam epitaxy
deposited Y1Ba2Cu3O7-x superconducting thin films Superconductor
Sci. & Tech. (IOP) UK, 8,
85-88. |
G.
Crystalline Semiconductors
|
140 |
S. B. Singh, P. K. Singh, R. M. Mehra
and G. P. Srivastava (1981) Study of scattering mechanism in p-Ge with magneto
microwave Kerr effect measurements at 24 GHz Solid
State Communications, 38, 125-128. |
|
141 |
R. M. Mehra and G. P. Srivastava
(1975) The free carrier magneto microwave effects in p-type
germanium phys. stat. sol. (b), 68,
497-506. |
|
142 |
S. B. Singh, R.
M. Mehra and P. C. Kothari (1975) Magneto microwave Kerr effect in n-type Indium
Antimonide J. Phys. D: Appl. Phys., 8,
L 96-99. |
|
143 |
G. P. Srivastava and R. M. Mehra (1974) Microwave Faraday rotation in p-type germanium phys. stat. sol. (b), 66, K
47-51. |
|
144 |
G. P. Srivastava and R. M.
Mehra (1972) The free carrier magneto
microwave Kerr effect in p-type Ge at 296 and 77K J. Phys. C: Solid State
Phys., 5, 928-932. |
|
145 |
G. P. Srivastava and R. M. Mehra (1971) Magneto-microwave Kerr
effect in germanium Indian J. Pure & Appl. Phys, 9,
784. |
I.
Ferrites and Dielectrics
|
146 |
P. K. Singh, Shiva Prasad,
R. M. Mehra, Pran Kishan, S. B.
Singh and G. P. Srivastava (1980) A study of effective line
width of Li-ferrites by magneto-microwave Kerr effect at 24 GHz Journal of Magnetism &
Magnetic Materials, 21, 297-306. |
|
147 |
S. B. Singh, P. K. Singh, R. M. Mehra
and G. P. Srivastava (1980) K-band interferometer for measuring the magneto
microwave Kerr effect in
semiconductors and ferrites Experimentelle Technik der Physik, 28,
69. |
|
148 |
S. Prasad, S. B. Singh, R.
M. Mehra and P. K. Singh (1979) A new expression for diagonal components of the permeability tensor and resonance in partially Magnetized ferrites phys. stat. sol. (b), 51, K 75-78. |
|
149 |
Shiva Prasad and R.
M. Mehra (1978) A Kerr effect study of microwave behaviour of
partially magnetised ferrites J. Phys. Chem. Solids.,
39, 353-357. |
|
150 |
Shiva Prasad and R.
M. Mehra (1977) Magneto-microwave Kerr effect in ferrites Experimentelle Technik der
Physik, 25, 329-333. |
|
151 |
Shiva Prasad and R.
M. Mehra (1977) Permeability tensor element for ferrites in Polder
Smith Region Physics
Letter A, 60,
233-234. |
|
152 |
S. Prasad and R. M. Mehra (1977) Magneto-microwave Kerr
effect in high conductivity MnZn ferrites Solid State
Communications, 22, 169-171. |
|
153 |
G. P. Srivastava, P. C. Mathur, Ms. Krishna & R.
M. Mehra
(1971) Dielectric measurements in
alloy semiconductor powders in the microwave frequency region Indian J. Pure & Appl. Phys.
9, 453-455. |
Annexure IV a
JOURNAL WISE BREAK UP
|
S. No. |
Journal |
No. of Publications |
|
1 |
Physica Status
Solidi (a) & (b) |
16 |
|
2 |
Journal of Non
Crystalline Solids |
14 |
|
3 |
Thin Solid
Films
|
12 |
|
4 |
Journal of
Applied Physics |
12 |
|
5 |
Materials Science-Poland
|
11 |
|
6 |
Indian Journal of
Pure & Applied Physics |
06 |
|
7 |
Journal of
Physics C&D |
05 |
|
8 |
Physical Review
B |
04 |
|
9 |
Journal of
Materials Science |
04 |
|
10 |
Solid State
Phenomena (Scietec, Switzerland) |
04 |
|
11 |
Solar Energy Materials & Solar Cell
(SOLMAT) |
04 |
|
12 |
Solid
State Communications |
04 |
|
13 |
Journal
of Applied Polymer Science |
04 |
|
14 |
Applied
Surface Science
|
03 |
|
15 |
Materials
Chemistry and Physics |
03 |
|
16 |
Materials Science
Forum
|
03 |
|
17 |
Physica Letters
A
|
03 |
|
18 |
Solid State
Electronics |
03 |
|
19 |
Journal
of Luminescence
|
03 |
|
20 |
European
Polymer Journal
|
03 |
|
21 |
Experimentelle
Tehnik der Physik |
02 |
|
22 |
International
Journal of Electronic |
02 |
|
23 |
Semicond.Sci.Techol.UK.
|
02 |
|
24 |
Journal of Physics
& Chemistry of Solids |
02 |
|
25 |
Turk. J.
Phys.
|
02 |
|
26 |
Key-Engineering
Mat.
|
02 |
|
27 |
Polymer Engineering
Science |
02 |
|
28 |
Current
Applied Physics |
02 |
|
29 |
Physical
Chemistry Research Institute, Japan |
01 |
|
30 |
Japanese Journal
of Applied Physics |
01 |
|
31 |
Journal of
Magnetism & Magnetic Materials |
01 |
|
32 |
Journal of
Thermal Analysis
|
01 |
|
33 |
Superconductivity
Science and Technology |
01 |
|
34 |
J. Instn.
Electronics & and Telecom. Engrs. |
01 |
|
35 |
Journal of Laser
Application
|
01 |
|
36 |
Journal of
Optics
|
01 |
|
37 |
Indian Journal
Engineering & Materials Science
|
01 |
|
38 |
J. Indian Inst
Science
|
01 |
|
39 |
Opto-Electronic
Review
|
01 |
|
40 |
Infrared
Physics& technology |
01 |
|
41 |
Journal of
Materials Science: Materials in Electronics |
01 |
|
42 |
Journal
of optoelectronics and advanced materials |
01 |
|
43 |
Philosophical
Magazine B |
01 |
|
44 |
Journal
of renewable and Sustainable Energy |
01 |
|
|
TOTAL |
153 |
Annexure IV b
List of Research Publications (2005-2009)
In Indexed/ Peer Reviewed Journals
LIST OF RESEARCH PUBLICATIONS FROM 2005 To
2009 (Prof. R. M. Mehra)
Published In Press Accepted Total
48 02 00
50
|
Year
|
Title |
Journal |
Co-Author/Authors |
|
2009 |
ZnO
solid-state dye sensitized solar cells using composite electrolyte of poly
(3-hexylthiophene-2,5-diyl) and carbon nanotubes |
JOURNAL
OF RENEWABLE AND SUSTAINABLE ENERGY 1, 033109 |
Seema Rani |
|
2009 |
Electronic
excitations induced modifications of structural and optical properties of
ZnO-porous silicon nanocomposites |
Nucl.
Instr. and Meth. In Phy. Res. B, 267,
2399-2402 |
R. G. Singh, Fouran Singh, I. Sulania, D. Kanjilal,
V. Agarwal, Kiran Sehrawat |
|
2009 |
Kinetics
of photodarkening in a-As2Se3 thin films |
Journal of Applied
Physics, 105, 123105 |
Dinesh C. Sati, R. Kumar, H. Jain, Ashtosh
Ganjoo |
|
2009 |
Investigation
of optical properties of GexSe80-xPb20 films |
J. Phys. D: Appl. Phys., 42, 115108 |
Kamal
Kumar, L. P. Purohit, R.
Kumar |
|
2009 |
Epitaxial growth of
Sc-doped ZnO films on Si by sol–gel rout |
Applied Surface Science, 255,
5781-5788 |
Ruchika
Sharma, Kiran Sehrawat, Akihiro
Wakahara |
|
2009 |
Effect
of oxygen ambient on structural, optical and electrical properties of
epitaxial Al-doped ZnO thin films on r-plane
sapphire by pulsed laser deposition |
Current Applied Physics, 9,737-741 |
Manoj
Kumar, Se-Young Choi |
|
2009 |
Investigations of highly conducting and
transparent Sc doped ZnO films grown by sol-gel process |
Material Science-Poland, 27, 225-237 |
Ruchika
Sharma, P. K. Shishodia, Akihiro
Wakahara |
|
2009 |
Epitaxial growth of highly transparent and conducting
Sc-doped ZnO films on c-plane sapphire by sol-gel process without buffer |
Current
Applied Physics |
|
|
2009 |
Study of dielectric properties of
styrene-acrylonitrile graphite sheets composites in low and high frequency
region |
European
Polymer Journal 45, 1777-1784 |
|
|
2009 |
Electrical,
Dielectric, and Electromagnetic Shielding Properties of
Polypropylene-Graphite Composites |
Journal
of Applied Polymer Science Journal
|
Varij Panwar, Jong-Oh Park, Suk-Ho Park, Sanjeev Kumar, |
|
2009 |
Effect of γ-ray
irradiation on morphology and
electrical properties of poly (vinyl hloride)/graphite composites |
Polymer
Engineering and Science, 49, 1136-1141 |
N. k. Srivastava, Rattan. S |
|
2009 |
Study
of electrical properties of polystyrene/foliated graphite composite |
Material Science-Poland, 27, 109-122 |
N. k. Srivastava |
|
2009 |
White light emission from
chemically synthesized ZnO–porous silicon nanocomposite |
J. Phys. D: Appl. Phys., 42, 062002 |
R. G. Singh, Fouran Singh, D. Kanjilal, V. Agarwal |
|
2008 |
Effect
of thickness on structural, electrical, optical and magnetic properties of Co
and Al doped ZnO films deposited by sol-gel route |
Applied Surface Science, 255, 2527-2532 |
Mamta Sharma |
|
2008 |
Structural,
Optical, Electrical and Magnetic properties of sol-gel derived Zn1-x-yCoxAlyO
films |
Material Science-Poland, 26, 659-673 |
Mamta Sharma |
|
2008 |
The
Meyer-Neldel rule in sol-gel derived polycrystalline ZnO-Al thin films |
Solid
State Communications, 147, 465-469 |
Parmod
Sagar, Manoj Kumar |
|
2008 |
Synthesis of
nanocrystalline ZnO powder via sol-gel route for dye-sensitized solar cells |
Solar
Energy Materials and Solar Cells, 92,
1639-1645 |
Seema Rani, Poonam Suri, P. K. Shishodia |
|
2008 |
Study of Structural,
Electrical, and Dielectric Properties of Polystyrene/Foliated Graphite
Nanocomposite Developed Via In Situ Polymerization |
Journal
of Applied Polymer Science, 109,
3991-3999 |
N. k. Srivastava |
|
2008 |
Study of electrical and
dielectric properties of styrene-acrylonitrile/graphite sheets composites |
European Polymer
Journal, 44, 2367-2375 |
Varij
Panwar |
|
2008 |
Analysis of Electrical,
Dielectric, and Electromagnetic Interference Shielding Behavior of Graphite
Filled High Density Polyethylene Composites |
Polymer
Engineering Science, 48, 2178–2187 |
Varij
Panwar |
|
2007 |
Trap
filled limit voltage (VTFL) and V2 law in space charge
limited currents |
Journal
of Applied Physics, 102,
094505-1-5 |
Anubha Jain, Pankaj Kumar, S. C. Jain, Vikram Kumar, R. Kaur |
|
2007 |
Photoluminescence
and absorption in sol-gel derived ZnO films |
Journal
of Luminescence, 126, 800-806 |
P.
Sagar, P. K. Shishodia |
|
2007 |
Influence of pH value on the
quality of sol–gel derived ZnO films |
Applied
Surface Science, 253, 5419-5424 |
Parmod
Sagar, P.K. Shishodia |
|
2007 |
Changes of structural,
optical and electrical properties of sol-gel derived ZnO films with their
thickness |
Materials
Science-Poland, 25, 233-242 |
A.
Jain, P. Sagar |
|
2007 |
Epitaxial growth of zinc oxide thin films on
epi-GaN/sapphire (0001) by sol-gel technique |
Thin Solid Films, 515, 3330-3334 |
Parmod Sagar, Manoj
Kumar |
|
2007 |
Effect
of electrolytes on the photovoltaic performance of a hybrid dye sensitized
ZnO solar cell |
Solar
Energy Materials and Solar Cells, 91,
518-524 |
Poonam
Suri |
|
2007 |
Photovoltaic performance
of dye-sensitized ZnO solar cell based on Eosin-Y photosensitizer |
Materials
Science-Poland, 25, 137-144 |
Poonam
Suri, Manoj Panwar |
|
2007 |
Photoluminescence studies in sol–gel
derived ZnO films |
Journal of
Luminescence, 126, 784-788 |
Neeru Kumar, Ravinder Kaur |
|
2007 |
Insulator conductor transition in
low-density polyethylene–graphite composites |
European Polymer
Journal, 43, 573–585 |
Varij Panwar, V. K. Sachdev |
|
2007 |
Effect of percolation on electrical and dielectric
properties of Acrylonitrile Butadiene Styrene/graphite composite |
Journal
of Applied Polymer Science, 106,
2101-2110 |
H.
S. Dahiya, Nawal Kishore |
|
2007 |
Investigation
of electrical and dielectric properties of pre-localized graphite/poly vinyl
chloride composites near the percolation threshold |
Journal
of Applied Polymer Science, 104, 2027-2033 |
N. k. Srivastava,
V. K. Sachdev |
|
2007 |
Meyer–Neldel rule in Se and S-doped hydrogenated amorphous silicon |
Solid State Electronics, 51, 1124-1128 |
S. K. Sharma, P. Sagar, Himanshu Gupta, Rajendra Kumar |
|
2007 |
Photoinduced degradation
in electrical properties of normally and obliquely deposited As2Se3
thin films |
Materials
Science-Poland, 25, 69-77 |
Priyamvada
Bhardwaj, P.K.
Shishodia |
|
2007 |
Optical and electrical
properties of obliquely deposited a-GeSe2 films |
Journal
of Material Science, 42, 1196-1201 |
Priyamvada
Bhardwaj, P.K.
Shishodia |
|
2007 |
Photoluminescence
studies of ZnO/porous silicon nanocomposites |
J. Phys. D: Appl. Phys., 40, 3090- 3093 |
R. G. Singh, Fouran Singh, V.
Agarwal |
|
2006 |
Band gap widening and
narrowing in moderately and heavily doped n-ZnO films |
Solid State Electronics, 50, 1420-1424 |
Anubha Jain, P. Sagar |
|
2006 |
Plasma enhanced chemical vapor deposition of ZnO
thin films |
Journal
of Non-Crystalline Solids, 352,
2343-2346 |
P. K. Shishodia, H. J. Kim, A. Wakahara, A. Yoshida, G. Shishodia |
|
2006 |
Sol-gel derived yttrium doped ZnO nanostructures
|
Journal
of Non-Crystalline Solids, 352,
2565-2568 |
Ravinder Kaur, A.V. Singh, Kiran Sehrawat, N. C. Mehra |
|
2006 |
Sol-gel derived highly transparent
and conducting yttrium doped ZnO films |
Journal
of Non-Crystalline Solids, 352,
2335-2338 |
Ravinder
Kaur, A.V. Singh |
|
2006 |
Characterization of
sol-gel derived Yttrium Doped n-ZnO/p-Si Heterostructure |
Materials
Science-Poland, 24, 375-383 |
Neeru Kumar, R. Kaur |
|
2006 |
Electrical
conductivity of prelocalized graphite-filled blend of polyvinyl
chloride/styrene acrylonitrile composites in relationship to morphology and
hardness |
phys. stat. sol.
(a), 203, 3754–3761 |
V. K. Sachdev,
N. K. Srivastava, Varij Panwar, H.
Singh, N. C. Mehra |
|
2006 |
Study of pre-localized Graphite/Styrene
Acrylonitrile Conducting Composites for Device Applications |
phys. stat. sol. (a), 203, 386-396 |
V.
K. Sachdev, Varij Panwar, H.
Singh, N. C. Mehra |
|
2006 |
Influence of Thickness on
Optical Properties of a: As2Se3 Thin Films |
Turk.
J. Phys., 30, 519-527 |
Dinesh
Chandra Sati, Rajendra
Kumar |
|
2005 |
Electrical and Optical
Properties of Sol-Gel Derive ZnO: Al Thin Films |
Materials
Science-Poland, 23, 685-696 |
Parmod Sagar, Manoj Kumar |
|
2005 |
Physical
properties of natively textured yttrium doped zinc oxide films by sol- gel |
Journal
of Material Science: Materials in Electronics, 16, 649-655 |
Ravinder Kaur, A. V. Singh |
|
2005 |
Influence of Hydrogen
Incorporation in sol-gel derived aluminum
doped ZnO thin films |
Thin
Solid Films, 489, 94-98 |
Parmod Sagar, Manoj Kumar |
|
2005 |
Pulsed
laser deposition of epitaxial Al doped ZnO film on sapphire with GaN buffer
layer |
Thin
Solid Films, 484, 174-183 |
Manoj
Kumar, Akihiro Wakahara, M.
Ishida, Akira Yoshida |
|
2005 |
Structural, electrical and
optical properties of sol-gel derived yttrium doped ZnO
films |
phys. stat. sol. (a), 202, 1053-1059 |
Ravinder Kaur, A. V. Singh |
|
2005 |
Pre-localized
Graphite/Polyvinyl Chloride Composites
for Electromagnetic Interference Shielding in X-band Frequency Range |
Material Science-Poland, 23, 269-277 |
V. K. Sachdev, N. K. Srivastava, Kamlesh Kumar |
|
2005 |
photoconductivity of selenium and sulphur doped a-Si:H thin films |
Turk.
J. Phys., 29, 243-248 |
S.
K. Sharma, H. Gupta, Rajendra
Kumar |
Annexure V
Conference
Papers
Annexure V
Conference Papers (from
2004)
International
Conference:
1 Study of junction properties of yttrium doped ZnO/p-Si
Ravinder Kaur, A. V. Singh and R. M. Mehra
Proceedings of 19th European Photovoltaic Solar Energy
Conference and Exhibition, 7-11 June 2004, Paris, France, pp 374.
2 Electrical Transport in sol-gel derived Al doped ZnO films
P. Sagar, Ravinder Kaur, M. Kumar and R. M. Mehra
Proceedings of 19th European Photovoltaic Solar Energy Conference and Exhibition, 7-11 June 2004, Paris, France, pp 377.
3 Development and Characterization of n-Zno/p-si Heterostructure (sol-gel derived)
Ravinder Kaur, N. Kumar, P. Suri, A. V. Singh and R. M. Mehra
Proceedings of Asia Pacific Microwave Conference (APMC-2004), December 15-18, 2004, New Delhi, APMC/04/C/87.
4 Properties and Electromagnetic Interference Shielding
Application of Pre-localized Graphite/Polyvinyl Chloride Composites in X-band
Freq. Range
V. K. Sachdev, N. K. Srivastava, V. Panwar, K. Kumar
and R. M. Mehra
“Asia Pacific Microwave Conference” (APMC-2004), Hotel Ashoka, New Delhi, December 15-18, 2004 (Poster Presentation)
5 Development and Characterization of n-ZnO/p-Si Heterostructure (sol-gel derived)
Ravinder Kaur, N. Kumar, Poonam Suri, A. V. Singh and R. M. Mehra
Proceedings of Asia
Pacific Microwave Conference (APMC-2004)
December 15-18,
2004, New Delhi, APMC/04/C/87.
6 Study
of junction properties of yttrium doped ZnO/p-Si heterostructures prepared by
sol-gel
Neeru Kumar, R. Kaur, R.
Manchanda and R. M. Mehra
Proceedings
of 20th European Photovoltaic Solar Energy Conference and
Exhibition,
6-10 June 2005, Barcelona, Spain pp. 383.
7 Dye sensitized solar cell using nano size ZnO
Poonam Suri, Manoj Kumar, A. Wakahara, A. Yoshida and R. M. Mehra
3rd International Conference on Materials for on Advanced Technologies (ICMAT 2005) & 9th International Conference Advanced Materials (ICAM 2005)
July 3 - 8, 2005, Singapore
8 Study of junction properties of yttrium doped ZnO/p-Si heterostructures prepared by
sol-gel
Neeru Kumar, R. Kaur, R. Manchanda and R. M. Mehra
Proceedings of 20th European Photovoltaic Solar Energy
Conference and Exhibition, 6-10 June 2005, Barcelona, Spain pp.383.
9 Degradation
of dye sensitized solar cell (ZnO electrode)
Poonam Suri, Manoj Kumar, Ritu Dhingra and R. M. Mehra
3rd International Conference on Materials for on Advanced Technologies
(ICMAT 2005) & 9th International Conference Advanced Materials (ICAM 2005)
July 3 - 8, 2005, Singapore
10 Photoluminescence
in Yttrium doped sol-gel- synthesized ZnO films
Neeru
Kumar, Ravinder Kaur and R. M. Mehra
Proceedings
of 21st European Photovoltaic Solar Energy Conference and
Exhibition, 4-8 September 2006,
Dresden, Germany. pp. 208.
11 Sol-gel derived
n-ZnO/p-Si heterostructures
Anubha
Jain, Neeru Kumar, Ravinder Kaur and R.M.Mehra
India-Japan
Workshop, 18-20 December, 2006, New Delhi pp. 67.
12 Study of Eosin Y sensitized ZnO Solar cell
Poonam Suri, Ritu Dhingra and R. M. Mehra
Proceedings of 21st European Photovoltaic Solar Energy Conference and Exhibition
September 4-8, 2006, Dresden, Germany, p 226-229.
13 Photoluminescence in Yttrium
doped sol-gel synthesized ZnO films.
N. Kumar, Ravinder Kaur, Poonam Suri and R. M. Mehra
Proceedings of 21st European Photovoltaic Solar Energy Conference and Exhibition
September 4-8, 2006, Dresden, Germany, p 208-210.
14 Photoluminescence in Yttrium doped sol-gel- synthesized ZnO films
Neeru Kumar, Ravinder Kaur and R. M. Mehra
21st European Photovoltaic Solar Energy Conference and
Exhibition, 4-8 September 2006, Dresden, Germany. pp. 208.
15 Influence of thickness of ZnO electrode on the energy conversion efficiency of
EosinY dye sensitized solar cell
Poonam Suri, P.K.Shishodia, Ritu Dhingra, T.Jimbo, T. Soga and R.M.Mehra
Proceedings of India –Japan Workshop (IJW) on Zinc Oxide Materials and Devices
December 18-20, 2006, New Delhi, p 57-61.
16 Luminescence and structural studies of ZnO/porous silicon nanocomposites films
grown using sol-gel technique
R. G. Singh, F. Singh, P. K. Kulariya and R. M. Mehra
Advanced Nano Materials
February 10-12, 2007 at Indian Institute of Technology Bombay, Mumbai, (poster)
17 Sol-gel derived n-ZnO/p-Si heterostructures
Anubha Jain, Neeru Kumar, Ravinder Kaur and R.M.Mehra
India-Japan Workshop, 18-20 December, 2006, New Delhi, pp.67.
18 Enhancement
of Photovoltaic Performance of Quasi Solid - State Dye Sensitized Solar Cell
Using CuI Layer
S. Rani, P. Suri, P.K. Shishodia, R.M.Mehra
Proceedings of the 23rd European Photovoltaic Solar Energy Conference, September 1-5, 2008, Valencia, Spain, pp. 275-277.
National
Conference:
1 Study of I-V characteristic of n-ZnO/p-Si heterostructures
Neeru Kumar, Poonam Suri, P.Sagar, Babita Gupta and R. M. Mehra
National Conference on Advanced Materials and
Technology (NCAMT-2004)
September 24-26, 2004, Department of
Physics, PGDAV College, Amritsar
2 Sol-gel
derived textured yttrium doped ZnO films
Ravinder Kaur, A. V. Singh, R. M. Mehra
XXVII Annual Meeting of EMSI and Conference on Electron Microscopy and
Allied Fields NPL, EMSI (April 1-3, 2004).
3 Development and Characterization of
Graphite Filled Polyvinyl Chloride Composite for device Application
V. K. Sachdev, Varij Panwar, N. K. Srivastava, N. C. Mehra and R. M. Mehra
“Electron Microscopy and Allied Fields” (EMSI-2004), National Physical Laboratory, New Delhi, April 1-3, 2004 (Oral Presentation)
4 Sol-gel derived yttrium doped ZnO nanostructures
Ravinder Kaur, A.V. Singh, Kiran Sehrawat, N. C.
Mehra and R. M. Mehra
National Conference on, ‘NANOCOMPOSITES AND
TECHNOLOGY’, February 26-27, 2005, Amity School of Engineering and Technology,
New Delhi.
5 Preparation and Characterization of Polystyrene/Graphite Nanocomposite
N. K. Srivastava, Varij Panwar, Suneeta Rattan and R. M. Mehra
“Semiconductor Materials and Recent Technologies” (SMART-2006), BMAS Engineering College, Agra (U.P.), October 13-14, 2006 (Oral Presentation)
6 Analysis of heterostructures: ZnO/Si
Neeru Kumar, Ravinder Kaur and R. M. Mehra
National Symposium on Semiconductor Materials and Recent Technologies
(SMART 2006) 12-14 October, 2006, Agra
7
Yttrium Doped Zinc Oxide Films prepared by sol-gel spin coating
Ravinder
Kaur, N. Kumar and R. M. Mehra
National Symposium on Semiconductor Materials and Recent Technologies
(SMART 2006) 12-14 October, 2006, Agra
8 Characterization of ZnO electrode for
dye-sensitized solar cell
Poonam Suri, Ritu Dhingra, P.K.Shishodia and R.M.Mehra
National Symposium on Semiconductor Materials and Recent Technologies
(SMART-2006)
October 13-14, 2006, B.M.A.S. Engineering College, Agra
9 The structural and photoluminescence properties of ZnO films grown on porous
Silicon templates by sol-gel technique
R.G.Singh, and R.M.Mehra
National Symposium on Semiconductor Materials and Recent Technologies
(SMART-2006) (Oral)
October 13-14, 2006, B.M.A.S. Engineering College, Agra
10 Pre-localized Graphite filled Poly (vinyl chloride) Composites Suitable for EMI Shielding Applications
N. K. Srivastava, Kamlesh Patel, P. S. Negi, R. M. Mehra and P. C. Kothari
“18th Annual General Meeting Material Research Society of India” (MRSI-2007), National Physical Laboratory, New Delhi, February 12-14, 2007 (Poster Presentation)
11 Modification
of structural and photoluminescence properties of ZnO-porous
silicon nanocomposites by SHI irradiation
R. G. Singh, Fouran Singh, R. M. Mehra,
52nd DAE Solid State Physics Symposium 2007
Department of Studies in Physics, University of Mysore Manasagangotri, December 27-31 2007 Mysore (Accepted for poster)
12 SHI
induced modifications of structural and optical properties of ZnO-porous
silicon nanocomposites
R.
G. Singh, F. Singh, K. Sehrawat and R. M. Mehra
National Conference on Photonics & Materials Science
(October 24-25, 2008), Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar - 125001 (Haryana)
13 Synthesis of ZnO-porous silicon nanocomposite for white light emitting source application
R. G. Singh, Fouran. Singh and R. M. Mehra
National Conference on Semiconductor Materials & Technology (NCSMT-2008)
(Oct. 16-18, 2008), Dept. of Physics, Gurukul Kangri University, Hardwar
14 Analysis of thermal degradation of
polystyrene/foliated graphite composite
N. K. Srivastava and R. M. Mehra
National Conference on Semiconductor Materials & Technology (NCSMT-2008)
(Oct. 16-18, 2008), Dept. of Physics, Gurukul Kangri University, Hardwar
15 Improvement of charge injection efficiency of P3HT sensitized ZnO solar cell by introduction of dye molecule
S. Rani, P. Suri, P.K. Shishodia, R.M.Mehra
National Conference on Semiconductor Materials & Technology (NCSMT-2008)
(Oct. 16-18, 2008), Dept. of Physics, Gurukul Kangri University, Hardwar
16 Kinetics of photodarkening in As2Se3 thin films
Dinesh C. Sati, R. Kumar, Ashtosh Ganjoo, H. Jain and R. M. Mehra
National Conference on Semiconductor Materials & Technology (NCSMT-2008)
(Oct. 16-18, 2008), Dept. of Physics, Gurukul Kangri University, Hardwar
17 Electrical
and Dielectric Properties of Polystyrene/Graphite Conducting Composites
N. K. Srivastava
and R. M. Mehra
National Conference on Recent Trends on Material Sciences (Feb. 10-11, 2009), DAV College, Amritsar
18 Enhancement in photovoltaic properties of ZnO based solid-state DSSCs by introduction of carbon nanotubes
Seema Rani and R. M. Mehra
National Conference on Recent Trends on Material Sciences (Feb. 10-11, 2009), DAV College, Amritsar
19 Influence of substrates on structural and optical properties of sol-gel deposited Sc-doped ZnO films
Ruchika Sharma, Kiran Sehrawat and R. M. Mehra
National Conference on Recent Trends on Material Sciences (Feb. 10-11, 2009), DAV College, Amritsar
20 Optical
properties of Boron doped ZnO thin films
Vinod Kumar, L. P. Purohit and R. M. Mehra
National Conference on Recent Trends on Material Sciences (Feb. 10-11,
2009), DAV College, Amritsar
21 Kinetics
of the photoinduced optical change in amorphous chalcogenides films
Dinesh C. Sati, R. Kumar, Ashtosh Ganjoo, H. Jain and R. M. Mehra
National Conference on Recent Trends on Material Sciences (Feb. 10-11,
2009), DAV College, Amritsar
Annexure VI
Ph.D. Thesis
Supervision
Annexure VI
Ph.D. Thesis
Supervision
University of Delhi:
S.No.
Name of Student Year of Award Title of Thesis
1. S.C.Aggarwal 1982 Study of Electronic Transport in thin Films
of Amorphous Chalcogenides (Te-Se
and Se-Sb Systems)
2. P.K. Singh 1982 Study of effective the width of Li-
ferrites by magneto-microwave Kerr
effect using K- band interferometer.
3. Saurabh Rani 1984 Study of Electron Transport Properties
of Thin Films of Binary Amorphous
Chalcogenides Ge-Se and Silicon.
4. Hemant Kumar 1986 Study of DC Electrical Conductivity
Thermoelectric Power and
Magnetoresistance in Bulk Amorphous GexSe1-x System
5. Surinder Koul 1986 Study of Transport Properties of
Amorphous Chalcogenides (Se,Se-
Ge,Se-Sb,Se-Te and Ge-Te-Se Systems
6. Rajesh Kumar 1989 Electrical and Optical Properties of
Amorphous Ge- Sb-Se and Ge-Sb-Se-Bi Systems
7. Manoj Arora 1989 Study of Electrical Transport properties
of Bismuth Doped Bulk Amorphous Ge-
Se System
8. Gurinder Kaur 1992 Thermal Analysis and Electrical
Transport Studies of Amorphous
Se80-xSbxTe20 System.
9. Ashtosh Ganjoo 1994 Effect of Indium Impurity on the
Thermal Electrical and Optical
Properties of Amorphous Se-Te System
10. Anurag Mishra 1995 Irradiation of High Temperature
Superconductive Y1Ba2Cu3O7-x Surfaces with Q-Switched Nd: Yag Pulsed Laser
11. Sandeep Kohli 1997 High Pressure Studies on p- and n-type
Se Based Binary and Ternary
Chalcogenides
12. Inderbir Kaur 1997 Electrical and Optical Properties of
Tertiarybutylphosphine Doped n-Type
Hydrogenated Amorphous Silicon
13. Amit Pundir 1998 Development and Characterisation of
Amorphous Chalcogenide Ternary System for Optical Data Storage
14. Raminder Mathur 1998 Formation Mechanism and Electron
Transport in Porous Silicon
15. Vivechana Agarwal 1999 Investigation of Transport and Optical
Properties of Porous Silicon
16. Jasmina Arora 1999 Study of Electrical & Optical Properties
and Photodegradation of Sulfur-Doped
Amorphous Hydrogenated Silicon Films
17. Arun Vir Singh 2004 Study of Structural, Electrical and
Optical Properties of Al-Doped and
Codoped ZnO Thin Films in Oxygen
Ambient
18. Manoj Kumar 2004 Growth and Characterization of High
Quality Epitaxial n-type ZnO Thin Films
19. Babita Gupta 2004 Transparent Properties of Carbon Thin
Films and its Application to Photovoltaic
Devices
20. Kiran Sehrawat 2004 Effect of Heavy Ion Irradiation and
Preparation Conditions on the
Photoluminescence
Efficiency and
Transport Properties of Porous
Silicon
21. PriyamVada Bhardwaj 2004 Transport Properties and Photoinduced
Changes in Amorphous Chalcogenides
22. Sanjeev Sharma 2005 Investigation of Transport Mechanism
and Thermal Equilibration in a-Si:H
Films Doped with Chalcogens
23. Ravinder Kaur 2005 Transparent and Conducting Sol-Gel
Derived Yttrium Doped ZnO Films
24. Parmod Sagar 2006 Characterization of Sol-Gel derived
Undoped
and Aluminium doped ZnO
films:
> Transparent Conductive >
Epitaxy
25. Neeru Kumar 2007 Growth and analysis of n-ZnO/P-Si
Heterostructures
26. Poonam Suri 2007 Development and characterization of dye
sensitized solar cell based on Zinc Oxide
27. Varij Panwar 2008 Study of Electrical, Dielectric and
Mechanical Properties of Conducting
Polymer Composites
28. Anubha Jain 2008 Fabrication, characterization and
analysis of n-ZnO/p-Si heterostructure
for photovoltaic application
29. Nalin Kumar Srivastava 2008 Development and Characterization of
Conductive Polymer Composites for
Electromagnetic Shielding
30. Mamta Sharma 2008 Study of Co and Al Doped Sol-gel
(Submitted) Derived ZnO Films for Dilute Magnetic
Semiconductor Application
31 Ruchika Sharma 2009 Development and Characterization
(Submitted) of
Doped ZnO films for Transparent
Conducting Window Application
Other Universities:
(Co-supervision)
32. L.P. Purohit 2000 Transport Properties of Amorphous
GKV, Hardwar Silicon and Chalcogenides
33. Rakesh Kumar 2004 Development of Some Stable and
Jammu University Efficient Photoelectrochemical/
Photovoltaic Solar Cell Devices with
Chalcopyrites or Transition Metal
Diachalcogenides or Other Similar
Materials
34. Harindra Singh 2008 Development and Characterization of
MD University, Rohtak Polymer Composites: Suitable for
Sensors
35. Himanshu Gupta 2008 Electronic and Optical Properties of
GKV, Hardwar amorphous Hydrogenated Silicon
(a-Si:H)
36. Pankaj Kumar Pal 2008 Development and Characterization of
GKV, Hardwar of Se-Te-Pb Ternary Alloys for their
Suitability to Memory Devices
37. Fateh Singh Gill 2008 Investigation of Electron Transport and
GKV, Hardwar Optical Properties of Porous Silicon
Ph.D. Students Date
of Registration
2. Ram Gopal 27.10.2005
3. Seema Rani 10.08.2007 University of Delhi
4. Dinesh Chandra Sati 09.02.2002 GKV, Hardwar